CMOS-compatible photonic integrated circuits on thin-film ScAlN
APL PHOTONICS(2024)
摘要
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with complementary metal-oxide semiconductor (CMOS) fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic study on the material quality of sputtered thin-film Sc0.1Al0.9N produced in a CMOS-compatible 200 mm line, including its crystallinity, roughness, and second-order optical nonlinearity, and developed an optimized fabrication process to yield 400 nm thick, fully etched waveguides. With surface polishing and annealing, we achieve micro-ring resonators with an intrinsic quality factor as high as 1.47 x 10(5), corresponding to a propagation loss of 2.4 dB/cm. These results serve as a critical step toward developing future large-scale, low-loss photonic integrated circuits based on ScAlN. (c) 2024 Author(s).
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要