Quantification of Si Dopant in β-Ga2O3-Based Semiconductor Gas Sensors by Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)

The development of chemical sensors is relevant for solving environmental problems of monitoring the atmosphere of cities and industrial zones. Semiconductor sensors based on metal oxides are promising chemical gas sensors owing to their high sensitivity, low cost, small size, and low energy consumption. The first attempts at pilot operation of atmospheric air monitoring systems based on such sensors revealed insufficient response stability. Doping of the basic material with silicon can solve the problem. At the same time, data on the amount and distribution of the dopant in the material are necessary to determine the relationship “synthesis conditions–composition–properties.” We propose an approach to the determination of the composition of novel semiconductor materials based on β-Ga2O3 with a silicon dopant content from 0.5 to 2 at