Enriching oxygen vacancies in hematite (α-Fe2O3) films with Cu impurities for resistive switching applications

Resistive-switching memory device is a promising candidate for the quest in areas of non-volatile memory. Herein, iron (III) oxide (hematite, α-Fe2O3) and Cu-doped Fe2O3 were employed as active layers in solution processed resistive random-access memory devices (s-RRAM). The fabricated device follows MIM (metal/semiconductor/metal) configuration with the fluorine-doped tin oxide-coated (FTO) glass plate as the bottom electrode and gold (Au) as the top electrode in a cross-pin configuration. Raman analysis revealed that if Cu dopant concentration increased beyond 3