Photoluminescent Bi-doped CsPbX3 (X: Br, I) perovskite quantum dots for optoelectronic devices

Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr3 and Bi-doped CsPbI3 PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr3 and CsPbI3 to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr3) to 630 nm (Bi-doped CsPbI3) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX3 perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr3) to 630 nm (Bi-doped CsPbI3) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.