Thiol-amine co-solvents aided direct synthesis of ZnTe thin films by spin coating for low cost optoelectronic applications
arxiv(2024)
Abstract
Zinc telluride (ZnTe) thin films have special semiconducting characteristics
that make them very promising for a broad range of optoelectronic applications.
In this work, a novel approach for synthesizing ZnTe thin films by spin coating
technique is followed using a unique solution process with ZnTe directly
dissolving in thiol-amine co-solvents. Thin films are synthesized on glass
substrates and air annealed at 250-350 C. The polycrystalline phase of
ZnTe is revealed through the X-ray diffraction (XRD) study. The scanning
electron microscopy (SEM) is used to observe the evolution of surface
smoothness with annealing temperature. Moreover, elemental compositions of ZnTe
thin film have been determined by energy dispersive spectroscopy (EDS) study.
FTIR spectroscopy reveals that ZnTe has been successfully synthesized as
confirmed by the characteristic peaks in the spectrum of 750-1000 cm-1. Optical
properties of the ZnTe thin films have been investigated using UV-vis
spectroscopy. The transmittance of the films increases with annealing
temperature. Furthermore, the optical bandgaps of the films of 2.92, 2.84, and
2.5 eV have been found at 250, 300, and 350 C annealing temperatures,
respectively. These results suggest that controlling the annealing environment
serves as a valuable strategy for tailoring the ZnTe film properties to meet
specific application requirements. These results reveal that spin coated ZnTe
thin films are attractive ones for various applications in optoelectronic
devices such as solar cells and photodetectors.
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