Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals

Basal plane dislocations (BPDs) in 4H-SiC are the main reason for the degradation of bipolar devices. In the experiment, the distribution of 4-fold symmetry BPDs is observed in the etch pit density of the 4H-SiC wafer, which is inconsistent with the phenomenon of the distribution of 6-fold symmetry BPDs because of the hexagonal structure of 4H-SiC. To explain the distribution of 4-fold symmetry BPDs in the grown crystal, 3D modeling of BPDs in 4H-SiC crystals grown by the PVT method has been performed. The results show that the adoption of 4-degree off-axis seed crystals that are widely used in the industry caused the distribution of 4-fold symmetry BPDs. Moreover, the distribution of BPDs is 6-fold symmetry in on-axis grown 4H-SiC single crystals; with the increase of the off-angle, the distribution of BPDs gradually changes from 6-fold to 4-fold symmetry, and the maximum value of the BPD density is at the periphery. In the end, the strategy of growing 4H-SiC crystals with large-size seed crystals has been proposed to reduce the BPD density in the wafer and improve the quality of the substrate. The calculation results shows that the use of 220 mm seed crystals can reduce the BPD density by 15% compared with 200 mm seed crystals. The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.