Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects
arxiv(2024)
摘要
The crystalline quality and degree of c-axis orientation of hexagonal AlN
thin films correlate directly with their functional properties. Therefore,
achieving AlN thin films of high crystalline quality and texture is of
extraordinary importance for many applications, but in particular in electronic
devices. Here, we present a systematic study revealing that the growth of
c-axis orientated AlN thin films can be governed by a chemical stabilization
effect in addition to the conventionally known structural, i.e. strain-induced,
stabilization mechanism. The promotion of in-plane growth of AlN grains with
c-axis out-of-plane orientation is demonstrated on Y, W or Al seed layers with
different thicknesses and crystallinity preliminary exposed to N2 at room
temperature. We establish that the stabilization mechanism is chemical in
nature: the formation of an N-rich surface layer on the metal seed layers upon
exposure to N2 pre-determines the polarity of AlN islands at initial stages of
thin film growth while the low energy barrier for the subsequent coalescence of
islands of the same polarity contributes to grain growth. These results suggest
that the growth of c-axis oriented AlN thin films can be optimized and
controlled chemically thus opening more pathways for energy-efficient and
controllable AlN thin-film growth processes.
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