Crystal growth and power device applications of -Ga₂O₃

Development of beta-Ga2O3 power devices has been accelerating over the past few years. In particular, 4-inch devicequality beta-Ga2O3 epi wafers have become commercially available, and low-loss trench MOS-type SBDs, and normally-off MOSFETs have been demonstrated. In this paper, we will explain recent progress in crystal growth techniques for beta-Ga2O3 and power devices based on this material.