Integration of low-thermal-budget In₂O₃ NMOS inverter and GaN HEMT for power electronics

Herein, we demonstrated an "interposer"-style integration of In2O3 FET-based gate-driver circuitry wire bonded to an AlGaN/GaN high electron mobility transistor (HEMT) device grown on a GaN-on-Si substrate, and its feasibility for power electronics was discussed. The normally-on AlGaN/GaN HEMT exhibited a threshold voltage of -2.8 V, with a maximum drain current density of 265 mA/mm. The device also showed good off-state performance, such as a high ON/OFF ratio (I-on/I-off) of similar to 10(10) with a breakdown voltage of similar to 445 V and an off-state leakage current of similar to 10(-12) A. The low-temperature processed In2O3 driver circuitry exhibited a high gain of similar to 64 and a maximum operating frequency of 2 kHz. The temperature-dependent study of the voltage transfer characteristics (VTC) of In2O3 driver circuitry exhibited stable operation up to 125 degrees C. An integrated In2O3 driver circuitry with GaN HEMT was demonstrated, marked by a 50 mA/mm drain current for circuit response of one cycle during the ON state. These results pave the way for future monolithic integration of oxide semiconductor-based gate-driver circuitry with power switches for energy-efficient integrated circuits.