Tunnel junctions based on interfacial 2D ferroelectrics
arxiv(2024)
摘要
Van der Waals (vdW) heterostructures have opened new opportunities to develop
atomically thin (opto)electronic devices with a wide range of functionalities.
The recent focus on manipulating the interlayer twist angle has led to the
observation of out-of-plane room temperature ferroelectricity in twisted
rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we
explore the switching behaviour of sliding ferroelectricity using scanning
probe microscopy domain mapping and tunnelling transport measurements. We
observe well-pronounced ambipolar switching behaviour in ferroelectric
tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator
barriers and support our experimental results with complementary theoretical
modelling. Furthermore, we show that the switching behaviour is strongly
influenced by the underlying domain structure, allowing fabrication of diverse
FTJ devices with various functionalities. We show that to observe the
polarisation reversal, at least one partial dislocation must be present in the
device area. This behaviour is drastically different from that of conventional
ferroelectric materials and its understanding is an important milestone for
future development of optoelectronic devices based on sliding ferroelectricity.
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