Double-pulse load-pull for trapping Characterization of GaN Transistors

We propose an RF double-pulse measurement technique in combination with load-pull to characterize dynamic effects in microwave transistors. An RF pre-pulse defines the Large-Signal Operating Point (LSOP), setting the transistor state in conditions comparable to those experienced in the final application, followed by an RF measurement-pulse. The power of the pre-pulse and the time-interval between the two pulses are swept to evaluate the effect on the final performance of two GaN transistor technologies.