13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput

Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D’Alessandro,Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen,Kim-Fung Chan, Michele Piccardi,Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan,Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian,Jiro Kishimoto, Toru Kamijo, Padma Musunuri,Chang Siau,Ramin Ghodsi

2024 IEEE International Solid-State Circuits Conference (ISSCC)（2024）

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摘要

With the recent evolution of AI, our digital world, constructed by networks, is advancing rapidly and driving demand for data bandwidth and transfer speed everywhere from mobiles to data centers, regardless of form factor. This paper presents a 1Tb 3b/cell 3DNAND Flash on 2YY Tiers with a 6-plane and 3.6GT/s data-transfer features designed for a variety of applications that require high bandwidth.

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关键词

3D NAND Flash,Peak Current,Arbitration,Digital World,Flash Memory,Eye Patch,Voltage Swing,Transistor Size,Transfer Speed,Clock Period,Specific Commands,Current Budget,Bandwidth Demand,Internal Oscillator

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