Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

The modes of growth of Ga2O3 crystals from a solution of gallium oxide in a MoO3 melt in the process of MoO3 evaporation at a temperature of 1050°C have been studied. It is shown that at this temperature the Ga2O3 crystalline phase is in equilibrium with the MoO3 melt. As a result of the experiments, single crystals of β-Ga2O3 were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.