A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

This letter presents the design, fabrication and measurement of a 72 kHz to 113 GHz ultra-broadband amplifier that includes a direct current (DC)-blocking functionality. This amplifier module stands out with a high average gain of 12.5 dB in the frequency range from almost DC to 110 GHz. This work not only combines electrical interconnections but also mechanical design considerations, thermal requirements and practical application specific aspects. To ensure a low thermal resistance, the InGaAs amplifier IC is directly mounted on an aluminium submount, applying an advanced gluing concept, and interconnected to an input and output 50 omega$\Omega$ grounded coplanar waveguide by wire bonds with a length of only 135 mu m$\umu {{\rm m}}$. To enable convenient usage of the package, 1 mm connectors are utilized. This amplifier module exhibits excellent thermal behaviour and group delay characteristics, making it an ideal choice for use in optical data transmission experiments. This letter describes an ultra-broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high-electron-mobility-transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use. With excellent thermal performance and group delay characteristics, it is ideal for optical data transmission experiments. image