Fault-tolerant structures against breakdown in heterogeneous ferroelectric PbZr0.52Ti0.48O3 thin films based on adaptive self-repairing effects

The design of fault-tolerant structures against the breakdown of heterogeneous ferroelectric films is essential to enhance the breakdown strength. Based on the self-repairing theory, heterogeneous ferroelectric PbZr0.52Ti0.48O3 (PZT) film capacitors with a fault-tolerant structures against breakdown were synthesized by utilizing dielectric/electrolytic dual characteristics of the amorphous aluminum oxide film (AmAO). The PZT/AmAO composite films with Au top electrodes exhibited significant weak breakdown at low voltages, whereas the breakdown in the composite films with Al top electrodes have been repaired and no longer occurred. Compared to PZT(100 nm)/AmAO(120 nm) composite films with Au top electrodes, breakdown strength of PZT(100 nm)/AmAO(120 nm) composite films with Al top electrodes improves from 278 MV/m to 477 MV/m, energy storage density increased from 14.3 J/cm3 to 22.5 J/cm3, since the heterogeneous interface and structural defects have been repaired by adaptive anodizing of Al electrode under high electric field. Cross-sectional SEM images have confirmed the formation of fresh aluminium oxide films (AAO) at the interfaces of AmAO/Al and PZT/AmAO during the application of an electric field. Defects have been effectively repaired, resulting in an increase in breakdown strength. This study establishes a theoretical and technical foundation for the design of fault-tolerant structures against breakdown in heterogeneous ferroelectric films.