High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried P-Gan Layer
ACS APPLIED ELECTRONIC MATERIALS（2024）
Key words
Ultraviolet photodetector,GaN,High electronmobility transistor,gate recess
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined