Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction
SCIENCE CHINA-MATERIALS(2024)
摘要
Gallium nitride (GaN) has garnered significant research interest for ultraviolet (UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta2NiSe5 with high mobility is successfully stacked with unintentionally-doped GaN to creat an integrated mixed-dimensional Ta2NiSe5/GaN (2D/3D) van der Waals heterojunction with a typical type-I band alignment. The resulting Ta2NiSe5/GaN heterojunction exhibits excellent UV detection performance, with a pronounced light on/off ratio of 10(7) and a large responsivity of 1.22 x 10(4) A W-1. Moreover, it demonstrates an enhanced detectivity up to 1.3 x 10(16) Jones under 365-nm light illumination at a bias of 4 V. The photodetector also exhibits a fast response speed of 1.22/3.16 ms. Remarkably, the device showcases exceptional stability, repeatability, and tolerance to harsh environmental conditions, including high temperature and acidic condition. Furthermore, leveraging the high responsivity, detectivity, and light on/off ratio of the photodetector, we successfully integrate this heterojunction device into UV optical communication, high-lighting its potential in information transmission.
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关键词
GaN,Ta2NiSe5,heterojunction,UV photodetector,super-high responsivity,harsh environment-resistant
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