Responsivity Enhancement of Wafer‐Bonded In0.53Ga0.47As Photo‐Field‐Effect Transistor on Si Substrate Via Equivalent Oxide Thickness Scaling
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2024）
关键词
EOT scaling,III-V and Si integration,InGaAs,photo-FET,SWIR detector
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要