Tuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe₂ monolayers via rhenium doping

Interplay between defects like mirror twin boundaries (MTBs) and dopants may provide additional opportunities for furthering the research on two-dimensional monolayer (ML) transition metal dichalcogenides. In this work, we successfully dope rhenium (Re) into molecular beam epitaxy grown ML MoSe2 and confirm the formation of a new type of MTBs, named 4|4E-M (M represents metal, Mo/Re) according to the configuration. Data from statistic atomic resolution scanning transmission electron microscopy also reveals a preferable MTB enrichment of Re dopants, rather than intra-domain. In conjunction with density functional theory calculation results, we propose the possible routes for Re doping induced formation of 4|4E-M MTBs. Electronic structures of Re doped MTBs in ML MoSe2 are also predicted theoretically and then preliminarily tested by scanning tunneling microscopy and spectroscopy.