Self-rectifying resistive switching in MAPbI₃-based memristor device

A critical stage in developing high-density memristors is addressing the sneak current within the crossbar architecture. One of the effective strategies to endow the memristive cell with the ability to prevent sneak currents when it is in a low resistance state is to give it an inherent diode, known as a self-rectifying memristive cell. This study demonstrates the Schottky diode inside the MAPbI(3)-based memristive cell, a consequence of its interaction with the tungsten (W) electrode. The performance of memory devices is reliable with low-voltage operation, a resistance window having over ten of magnitude, and the retention time remains over 10(4) s. Prominently, the self-rectifying behavior is sustainable over 150 cycles and exhibits a rectification ratio of approximately 10(2) times. Density functional theory calculation reveals the presence of unoccupied gap states on an interfaced MAPbI(3) surface, serving as electron trapping states during the charge transport across the W/MAPbI(3) Schottky interface. Consequently, the conduction mechanism is primarily governed by an interfacial-controlled model, notably Schottky emission. This improvement promises to eliminate sneak currents in future crossbar array fabrication.