Strain-induced valley transport in CrBr_3/WSe_2/CrBr_3 van der Waals heterostructure

Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and exiting physical phenomena. Here, we present a proof-of-concept valleytronic device based on CrBr_3-encapsulated WSe_2 showing an unprecedented valley splitting of ∼ 100 meV under compressive strain of the WSe_2, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80% than is maintained in a range of ∼ 0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated.