Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
Solid-State Electronics(2024)
Abstract
The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of β-Ga2O3 and Al2O3 was mapped
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Key words
β-Ga2O3 FET,Wide bandgap,Power device,Oxide traps,Carrier number fluctuation,Low-frequency noise
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