Effective surface passivation for stable and high-performance inverted CsPbI2Br perovskite solar cells with efficiency over 15%

Inverted CsPbI2Br perovskite solar cells (PSCs) still suffer from substantially non-radiative recombination losses at the perovskite interface, which limits the future advancement of CsPbI2Br perovskite-based single- and multi-junction photovoltaic cells. Interfacial defect passivation of perovskite films is an effective approach for enhancing the performance of PSCs. In this study, we introduce thiophene halide salts with different side groups on the surface of CsPbI2Br films to passivate the inorganic perovskite film and investigate their passivation effects. Our studies show that the 2-thiophenemethylammonium iodide (TM) passivator with –CH2NH3I side group effectively mitigates the trap density of the perovskite film by forming coordination bonding with Pb2+ ions, thus significantly inhibiting the non-radiative recombination in the resulting PSC. In addition, after the TM treatment, the better energy-level alignment between the CsPbI2Br/[6,6]-Phenyl C61 butyric acid methyl ester (PCBM) interface is achieved, thus enhancing the charge extraction from perovskite to the charge transport layer. The resulting inverted CsPbI2Br device demonstrates a significantly enhanced champion efficiency of 15.07% with a Voc of 1.16 V, Jsc of 16.42 mA/cm2, and FF of 79.11%, compared to the 11.19% efficiency of the control device, and maintains >97% of the initial efficiency after being stored for over 1700 h in N2 atmosphere. This work confirms the importance of substituent groups on surface passivation molecules for effective passivation of defects and optimization of energy levels, particularly for Voc improvement.