Band alignment engineering at ultra-wide bandgap GeO2/SiO2 heterointerfaces

Owing to the tremendous contribution for the carrier transport across the interface, the band alignment engineering in oxide semiconductor heterojunctions (OSHs) is of vital importance for developing oxide semiconductor optoelectronic devices. Here, we have deposited a series of ultra-wide bandgap GeO2 thin films on quartz substrates by the direct-current reactive magnetron sputtering method to construct the OSHs and described the effect of the flow rate ratios of O2 and Ar (O2:Ar) and substrate temperatures on the bandgap energies of GeO2 films and band alignments at the interface of OSHs. Based on the energy loss spectra of O 1 s peaks, the tunable bandgap energies ranging from 4.37 to 5.37 eV have been achieved for GeO2 films. An obvious variation of band alignments has been found in the OSHs, suggesting the dramatically influence of deposition conditions. The valence band offsets are determined to be ranging from 1.85 to 1.96 eV (from 1.88 to 1.95 eV) and the conduction band offsets are calculated to be ranging from 1.88 to 2.78 eV (from 1.74 to 2.19 eV) for the GeO2 films grown at different O2:Ar (substrate temperatures), respectively, due to the nonlocalization of the oxygen vacancies in valence band and the formation of single hexagonal phase in the GeO2 film. Our findings on the band alignment engineering in the GeO2/SiO2 heterointerfaces will open the way for developing GeO2-based optoelectronic devices.