Investigation of the correlation between structure and microwave dielectric properties of ZnV2O6 ceramic using P-V-L bond theory

Novel ZnV2O6 ceramic was synthesized using the solid-state process. A single monoclinic crystalline phase with a space group C2/m was detected at the sintering temperatures ranging from 580 to 670 degrees C. The correlations between the chemical bond parameters and microwave dielectric properties were analyzed using the P -V -L bond theory. The full width at half maximum (FWHM) of the most intense Raman peak at 914 cm-1 is inversely proportional to the Qxf value. The ZnV2O6 ceramic can be well-sintered at 640 degrees C to exhibit an excellent combination of microwave dielectric properties (er =14.6, Qxf =46,000 GHz and zf =-42 ppm/degrees C). Additionally, the specimen sintered at 580 degrees C (er =13.2, Qxf =28,000 GHz and zf =-5.2 ppm/degrees C) is also suggested for highly thermal-stable applications. Both samples can be used as ultra-low-temperature co-fired ceramics (ULTCCs) for high-frequency applications.