Nanoscale variation of the Rashba energy in BiTeI
arxiv(2024)
Abstract
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that
produces large Rashba spin splitting. Due to its potential utility in
spintronics and magnetoelectrics, it is essential to understand how defects
impact the spin transport in this material. Using scanning tunneling microscopy
and spectroscopy, we image ring-like charging states of single-atom defects on
the iodine surface of BiTeI. We observe nanoscale variations in the Rashba
energy around each defect, which we correlate with the local electric field
extracted from the bias dependence of each ring radius. Our data demonstrate
the local impact of atomic defects on the Rashba effect, which is both a
challenge and an opportunity for the development of future nanoscale spintronic
devices.
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