Bandwidth Optimization and Fabrication of High-Power MUTC-PD

A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured band width of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of 20 mu m. In addition, the influence of modulation depth on high-speed and high-power performance is studied.