Interfacial-Layer-Free Ge0.95Si0.05 Nanosheet FeFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Germanium silicon alloys,Germanium,Gallium arsenide,FeFETs,Tin,Iron,Superlattices,Chemical vapor deposition,ferroelectric field-effect transistor (FeFET),gate-all-around (GAA),GeSi,interfacial layer,isotropic wet etching,nanosheets (NSs)
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