CHARM High-energy Ions for Micro Electronics Reliability Assurance (CHIMERA)

IEEE Transactions on Nuclear Science(2024)

Cited 0|Views5
No score
Abstract
We present the progress related to CERN’s capacity of delivering highly penetrating, high-LET heavy ions for radiation effect testing of electronic components within the CHIMERA (CHARM High-energy Ions for Micro Electronics Reliability Assurance) project. Profiting from the existing accelerator infrastructure, Monte Carlo simulations and a 300 μm-thick silicon diode, we highlight the beam characterization capabilities and a summary of the beam properties. Finally, we present the comparison of the SRAM SEE cross-section measurements with respect to other heavy ion facilities.
More
Translated text
Key words
CERN,High Energy Heavy Ions,Beam Characterisation,Single Event Effect (SEE),Single Event Upset (SEU),high Linear Energy Transfer (LET),Electronics testing,silicon,diode
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined