Heavy-Ion-Induced Displacement Damage Effects on WO_x ECRAM

Electrochemical random access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog neuromorphic computing applications. Displacement damage in WO _3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of ~10 ¹¹ cm ^-2 ), metal oxide ECRAM does not exhibit significant change – demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (>10 ¹¹ cm ^-2 ), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.