High-Performance HfO2/Al2O3 Superlattice MIM Capacitor in a 200 Mm High-Volume Batch-ALD Platform

Partha Mukhopadhyay, Ivan Fletcher, Zuriel C. Couvertier, Julio Morris, Jennifer Perez, Chris Nichols, John Allgair,Winston V. Schoenfeld, Jim Vandevere, Sara Aoki, Enzo Novoselic, Shara Lombardo,Dina Triyoso,Jon Kretzschmar,Anton Devilliers,Jim Fulford

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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关键词

Atomic layer deposition (ALD),capacitance density,hafnium aluminate,HfO2,high-k dielectric,metal-insulator-metal (MIM) capacitor,superlattice

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