Total Ionizing Dose Effects on a CDTI Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Antoine Salih Alj,Pierre Touron,Francois Roy,Stephane Demiguel,Julien Michelot,Valerian Lalucaa,Cedric Virmontois,Pierre Magnan,Vincent Goiffon

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2024）

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关键词

Electric potential,Charge transfer,Logic gates,Dark current,Charge coupled devices,CMOS image sensors,Electron traps,Capacitive deep trench isolation (CDTI),charge coupled device (CCD),charge transfer inefficiency (CTI),CMOS image sensor (CIS),dark current,full well charge (FWC),interface states,oxide traps,total ionizing dose (TID)

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