The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology
IEEE Transactions on Nuclear Science（2024）
Key words
Transistors,Threshold voltage,Logic gates,FinFETs,Leakage currents,Periodic structures,Degradation,Fin-based field effect transistor (FinFET),leakage current,number of fins per transistors,threshold voltage (VT),total ionizing dose (TID)
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