Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection
IEEE Electron Device Letters（2024）
关键词
Silicon carbide,Dark current,Phototransistors,Sensitivity,Photoconductivity,Noise figure,Junctions,4H-SiC,phototransistor,weak ultraviolet detection,reach through collector,punch through
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