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A New High Density 3D Stackable Via RRAM for Computing-in-Memory SOC Applications

IEEE Transactions on Electron Devices(2024)

引用 0|浏览22
关键词
Three-dimensional displays,Latches,Logic gates,Resistance,Voltage,Layout,Common Information Model (computing),Artificial synapse,CMOS logic,computing-in-memory (CIM),multiply-accumulate (MAC),neural network (NN),resistive random access memory (RRAM)
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