Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga2O3/p-Si Heterojunction
IEEE Electron Device Letters(2024)
Abstract
Regular β-Ga
2
O
3
nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photodetector of the β-Ga
2
O
3
nanowire network/p-Si substrate. The photodetector exhibited excellent photodetection performance at room temperature, including a response/decay time of 30/20 ms, a high light on/off ratio of 5309, and a rectification ratio of 164.22, etc. The impact of the energy band structure between β-Ga
2
O
3
nanowire and p-Si substrate, the large specific surface area and the optical trapping effect of nanowire network on the device performance were analyzed. Our research offers an original way to integrate β-Ga
2
O
3
nanowires with the Si-based substrate.
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Key words
β-Ga2O3 nanowires,CVD,p-Si,solar-blind ultraviolet photodetector
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