Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-Μm GaAs Phemt Process
IEEE Microwave and Wireless Technology Letters（2024）
Key words
Fifth generation (5G),gallium arsenide (GaAs),Ka-band,linearity,millimeter wave (MMW),pHEMT,power amplifier (PA),stacked-FET,wideband
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