A new SPICE modeling approach of annular MOSFET in 350 nm commercial CMOS process

Annular gate MOSFETs have emerged as potential solutions for radiation-hardened electronics, demonstrating exceptional total ionizing dose tolerance. However, accurate modeling of annular MOSFETs is crucial when designing analog integrated circuits for use in radiation environments, especially when implementing commercial CMOS processes. To enable circuit simulation using tools like SPECTRE/SPICE, foundry-provided PDKs must incorporate a rigorously verified compact model of annular MOSFET behavior. TCAD simulation can then be used to numerically evaluate the current characteristics of the annular MOSFET against the refined compact model constructed from the foundry-provided PDK. In this paper, by aligning the current characteristics of a standard NMOS between TCAD and SPICE simulations, we can verify the material process conditions. Then, based on the material process parameters, the model of the annular gate MOSFET is established using the TCAD simulator. Finally, reasonable agreements are obtained between the TCAD and SPICE simulation results for the I DS -V GS and I DS -V DS characteristics.