Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions

This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors and their futuristic applications of AlGaN/GaN-based MOSHEMT biosensors. Various types of MOSFET-based biosensors, along with their limitations and challenges, have been discussed in this review. The unique and compelling features of AlGaN/GaN-based MOSHEMT biosensors, including the capability to achieve high sensitivities, low noise performance, and fast response times due to high frequency device characteristics, have been presented and highlighted to provide an insight into their prolific applications. The future prospects of AlGaN/GaN-based MOSHEMT biosensors have been elaborated, suggesting their prominent focus in artificial intelligence integration, wearables, and point of care test (POCT) devices. The advancement of technology with the integration of artificial intelligence algorithms in biosensors can significantly enhance their sensitivity, specificity, and accuracy. Real-time monitoring of various physiological parameters can be offered by wearable biosensors, providing valuable information for healthcare applications. Point-of-care diagnostics based on AlGaN/GaN-based MOSHEMT biosensors can revolutionize the healthcare industry by providing rapid and cost-effective diagnostic tools for various diseases.