Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting

This work aims to estimate the Curie temperature and critical exponents in the critical regime of III-V ferromagnetic semiconductor (FS) (Ga,Mn)P film using various methods, including Arrott and Kouvel-Fisher plots, as well as electrical transport measurements. The (Ga,Mn)P film was prepared by implanting Mn ions into an intrinsic (001) GaP wafer, followed by pulsed laser melting (PLM). The magnetic properties of the (Ga,Mn)P layer were systematically investigated. The study investigated the accuracy of four different methods in determining the critical behaviors for the magnetic properties close to TC. The results suggest that the critical exponents are similar to those of the mean-field model, as indicated by the modified Arrot plots and temperature dependent effective critical exponents. However, the accuracy of the temperature-dependent resistance Rxx(T) method and Kouvel-Fisher (K -F) analysis is limited due to the Gaussian distribution of Mn ions in the film.