Highly reliable nanoelectrothermal non-volatile memory with cmos-level voltage and low on-state resistance

This paper reports a highly reliable nanoelectrothermal non-volatile memory (NET-NVM) with complementary metal-oxide-semiconductor (CMOS)-level voltage and low on-state resistance. To overcome the performance limitations of the conventional nanoelectromechanical non-volatile memory (NEM-NVM), we introduced an electrothermal actuation method capable of generating a high contact force at a low voltage. Additionally, an out-of-plane electrode structure was utilized to achieve a low on-state resistance. As a result, the fabricated NET-NVM exhibited outstanding performance, including high reliability as well as CMOS-level voltage and low on-state resistance. This achievement opens new possibilities for NET-NVM in future advanced computing systems.