A 60 GHz Down-Conversion Mixer featuring Energy-saving Standby-Mode in 22 nm FD-SOI

2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC(2023)

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Abstract
This paper presents a 60 GHz switchable down-conversion mixer implemented in a 22nm Fully-Depleted-Silicon-On-Insulator (FD-SOI) technology. The mixer consists of an local oscillator (LO) single-ended to differential (S2D) driver and a Gilbert cell based mixer core with baseband buffers. Thanks to the LO S2D driver, the mixer only requires a minimum LO power of -15dBm for operation. The measured peak conversion gain is 8 dB. Including the LO driver and baseband buffers, the total DC power is 23mW. The circuit core consumes 0.11mm(2) of area. Compared to the state-of-the-art mixers at 60 GHz, the circuit shows the highest bandwidth and gain, and the lowest LO power. Furthermore, to the authors' best knowledge, this is the first investigation of a 60 GHz down-conversion mixer regarding fast switching between active and standby-mode using the backgate for the mixer core avoiding the critical transistor breakdown problem induced by the switching.
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Key words
22nm FD-SOI,back-gate,CMOS,millimeterwave integrated circuits,switchable,down-conversion mixer
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