Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology

This paper describes the design of a three-stage driver amplifier operating between 75 and 85 GHz. The amplifier is implemented using a $0.1-\mu \mathrm{m}$ Gallium Arsenide technology. Based on the measured results, the amplifier has a small-signal gain of 18.8 dB at a nominal bias condition at the mid-band. In addition, more than 18.2 dBm output power is achieved across the bandwidth. The maximum output power of 20.9 dBm is obtained at 81 GHz. The designed amplifier is very compact, only $1.2 \times 0.76 \mathrm{~mm}^{2}$ in size, including the pads, and consumes 100 mA from a 4 V power supply.