Enhancing Comprehensive Performance via Capturing and Scattering the Carriers inside PESU-Based Nanocomposite Film Capacitors

Film capacitors have become key electronic components for electrical energy storage installations and high-power electronic systems. Nonetheless, high-temperature and high-electric-field environments would cause a surge of the energy loss, placing a fundamental challenge for film capacitors applied in harsh environments. Here, we constructed a composite film, combining poly(ether sulfone) (PESU) with excellent thermal stability and large-band-gap filler boron nitride nanosheets (BNNSs). The introduction of BNNSs would form deep/shallow traps inside the dielectric polymer matrix, effectively affecting charge migration. Via density functional theory (DFT) calculation, the higher highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of the BNNS than the matrix facilitate scattering electrons and attracting holes. The resultant composite obtains the desired discharged energy densities (U-d) of 5.89 and 3.86 J/cm(3) accompanied by an efficiency above 90% at 150 and 200 degrees C, respectively, surpassing those of existing dielectric materials at the high-temperature conditions. The paper provides a promising composite dielectric material for high-performance film capacitors capable of operating in harsh environments.