Low-Cost Fabrication and Electrical Properties of IZO Thin Film Transistors

Metal oxide films have great potential to meet the requirements of high carrier mobility, high electrical conductivity, mechanical flexibility, and optical transparency. However, the deposition of metal oxide films takes a long time and the equipment is more complex. Moreover, the annealing temperature is too high and is incompatible with the flexible substrate. In this paper, combustion processing for preparing InZnO(IZO) thin films with low annealing temperature is reported, and a thin film transistor based on Si substrate with Sb 2 O 3 as gate medium and IZO as the channel is successfully prepared. It shows the huge potential application of IZO in TFT.