Third harmonic generation due to free carrier in InSb using a terahertz free electron laser

Thanh nhat khoa Phan,Shimizu Tomoki,You wei Wang,Kosaku Kato,Verdad c. Agulto,Goro Isoyama,Shinsuke Fujioka,Makoto Nakajima

OPTICS LETTERS（2024）

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Abstract

We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a terahertz (THz) free electron laser (FEL). The conversion of 4 THz (wavelength 70 mu m) FEL outputs into its third harmonic 12 THz was observed. We found that by tuning the sample temperature to 360 K, high conversion efficiency up to 1% can be obtained and is the highest in the THz and FIR regions below 10 THz. We also discuss the observed intensity dependence of the THG with the nonlinear order lower than 3 when the pumping intensity was high. (c) 2024 Optica Publishing Group

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