Atomically thin PdS₂: physical characteristics and electronic device applications

This paper details the fabrication and characterization of field-effect transistors (FETs) and photodetector devices based on few-layered palladium disulfide (PdS2) films. PdS2 is an emerging member of the transition metal dichalcogenide family that has not been extensively studied. In this study, we evaluated various characteristics of PdS2 by fabricating FET devices and measured the contact resistance using the transmission line method to be 114 M Omega center dot mu m. We evaluated the electron transport properties of the fabricated FETs to confirm their n-type behavior and measured their capacitance-voltage (C-V) curves. The field-effect mobility of the few-layered PdS2 FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.85 cm(2) V-1 s(-1).