A comparison of resistive switching parameters for memristive devices with HfO₂ monolayers and Al₂O₃/HfO₂ bilayers at the wafer scale

Memristive devices integrated in 200 mm wafers manufactured in 130 nm CMOS technology with two different dielectrics, namely, a HfO2 monolayer and an Al2O3/HfO2 bilayer, have been measured. The cycle-to-cycle (C2C) and device-to-device (D2D) variability have been analyzed at the wafer scale using different numerical methods to extract the set (V-set) and reset (V-reset) voltages. Some interesting differences between both technologies were found in terms of switching characteristics.