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Comprehensive Analysis of Read-after-write Latency in HfZrOX-based Ferroelectric Field-Effect-transistors with SiO2 Interfacial Layer

Haesung Kim,Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim,Sung-Jin Choi,Dae Hwan Kim,Dong Myong Kim,Daewoong Kwon,Jong-Ho Bae

APPLIED PHYSICS LETTERS（2024）

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