Comprehensive analysis of read-after-write latency in HfZrO_X-based ferroelectric field-effect-transistors with SiO₂ interfacial layer

In this paper, a quantitative analysis is performed focusing on the read-after-write latency (RWL) phenomenon in HfOX-based ferroelectric field-effect transistors with a metal-ferroelectric-insulator-semiconductor structure. RWL is scrutinized by modifying two variables: the pulse width (t(p)) for the "write 1" operation and the operating temperature (T); the response of the charge component is found to follow an emission mechanism. Additionally, we identified a notable change in charge behavior at a specific temperature (T-b), where capture and emission are in balance. Experimental investigations have demonstrated that the activation energy (E-A) for these charge components is situated between 0.2 and 0.5 eV, and the T-b is similar to 50 degrees C. By elucidating the relationship between T, t(p), remnant polarization (P-r), and T-b, we offer insights into the importance of optimizing t(p) and P-r on the transient response of the balanced charge and the related RWL phenomenon.